| PART |
Description |
Maker |
| IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压，超低功耗的CMOS静态RAM
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| IS62WV5128DALL-55BI IS62WV5128DALL-55BLI IS62WV512 |
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS62WV5128ALL-70BI IS62WV5128BLL-55BI IS62WV5128BL |
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
Integrated Silicon Solution...
|
| AND8139D NL17SV16XV5T2 AND8139 NL17SV00XV5T2 NL17S |
2-Input OR Gate, Ultra-Low Voltage
Non Inverting Buffer, Ultra Low Voltage
Single 2-Input NOR Gate, Ultra-Low Voltage
Single 2-Input NAND Gate, Ultra-Low Voltage
ULTRA-LOW VOLTAGE MINIGATE DEVICES SOLVE 1.2 V INTERFACE PROBLEMS
|
ONSEMI[ON Semiconductor]
|
| BS62UV4000STI BS62UV4000 BS62UV4000EC BS62UV4000EI |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit
|
BSI[Brilliance Semiconductor]
|
| BS616UV8020BI BS616UV8020 BS616UV8020BC |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
|
BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
|
| AS5C4009LLCW-100883C AS5C4009LLCW-100IT AS5C4009LL |
512K x 8 SRAM - ultra low power
|
Austin Semiconductor
|
| NCV8703MX30TCG NCV8703MX18TCG NCV8703MX28TCG NCV87 |
300 mA, Ultra-Low Quiescent Current, IQ 12 A, Ultra-Low Noise, LDO Voltage Regulator
|
ON Semiconductor
|
| N08L163WC2C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
| N08L63W2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
|
ON Semiconductor
|
| N08L163WC1CT1-55IL N08L163WC1C N08L163WC1CT1 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
